Magnetostatics of synthetic ferrimagnet elements

We calculate the magnetostatic energy of synthetic ferrimagnet (SyF) elements, consisting of two thin ferromagnetic layers coupled antiferromagnetically through RKKY coupling. We calculate exact formulas as well as approximate yet accurate ones, which can be used to easily derive energy barriers and anisotropy fields of SyF. These can be used to evaluate coercivity, thermal stability and other useful quantities

A compact model of precessional spin-transfer switching for MTJ with a perpendicular polarizer

International audienceMagnetic Tunnel Junction (MTJ) devices are CMOS compatible with high stability, high reliability and non-volatility. A macro-model of MTJ with preces- sional switching is presented in this paper. This model is based on Spin-Transfer Torque (STT) writing approach. The current-induced magnetic switching and excitations was studied in structures comprising a perpendicularly magnetized polarizing layer (PL), an in-plane magne- tized free layer (FL), and an in-plane magnetized analyzing layer (AL)

Analysis of anisotropy crossover due to oxygen in Pt/Co/MOx trilayer

Extraordinary Hall effect and X-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta...) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from in-plane to out-of-plane. We focused on the influence of plasma oxidation on Pt/Co/AlOx perpendicular magnetic anisotropy. The interfacial electronic structure is analyzed via X-ray photoelectron spectroscopy measurements. It is shown that the maximum of out-of-plane magnetic anisotropy corresponds to the appearance of a significant density of Co-O bondings at the Co/AlOx interface

Conception sur mesure d'un FPGA durci aux radiations à base de mémoires magnétiques

Le but de la thèse a été de montrer que les cellules mémoires MRAM présentent de nombreux avantages pour une utilisation en tant que mémoire de configuration pour les architectures reconfigurables et en particulier les FPGAs (Field Programmable Gate Arrays). Ce type de composant est programmable et permet de concevoir un circuit numérique simplement en programmant des cellules mémoires qui définissent sa fonctionnalité. Un FPGA est principalement constitué de cellules mémoires. C'est pourquoi elles déterminent en grande partie ses caractéristiques comme sa surface ou sa consommation et influencent ses performances comme sa rapidité. Les mémoires MRAM sont composées de Jonctions Tunnel Magnétiques (JTMs) qui stockent l'information sous la forme d'une aimantation. Une JTM est composée de trois couches : deux couches de matériaux ferromagnétiques séparées par une couche isolante. Une des deux couches ferromagnétiques a une aimantation fixée dans un certaine direction (couche de référence) tandis que l'autre peut voir son aimantation changer dans deux directions (couche de stockage). Ainsi, la propagation des électrons est changée suivant que les deux aimantations sont parallèles ou antiparallèles c'est-à-dire que la résistance électrique de la jonction change suivant l'orientation relative des aimantations. Elle est faible lorsque les aimantations sont parallèles et forte lorsqu'elles sont antiparallèles. L'écriture d'une JTM consiste donc à changer l'orientation de l'aimantation de la couche de stockage tandis que la lecture consiste à déterminer si l'on a une forte ou une faible résistance. Les atouts de la JTM font d'elle une bonne candidate pour être une mémoire dite universelle, bien que des efforts de recherche restent à accomplir. Cependant, elle a de nombreux avantages comme la non-volatilité, la rapidité et la faible consommation à l'écriture comparée à la mémoire Flash ainsi que la résistance aux radiations. Grâce à ces avantages, on peut déjà l'utiliser dans certaines applications et en particulier dans le domaine du spatial. En effet, l'utilisation dans ce domaine permet de tirer parti de tous les avantages de la JTM en raison du fait qu'elle est intrinsèquement immune aux radiations et non-volatile. Elle permet donc de réaliser un FPGA résistant aux radiations et avec une basse consommation et de nouvelles fonctionnalités. Le travail de la thèse s'est donc déroulé sur trois ans. La première année a d'abord été dédiée à l'état de l'art afin d'apprendre le fonctionnement des JTMs, l'architecture des FPGAs, les techniques de durcissement aux radiations et de basse consommation ainsi que le fonctionnement des outils utilisés en microélectronique. Au bout de la première année, un nouveau concept d'architecture de FPGA a été proposé. Les deuxième et troisième années ont été dédiées à la réalisation de cette innovation avec la recherche de la meilleure structure de circuit et la réalisation d'un circuit de base d'un FPGA ainsi que la conception puis la fabrication d'un démonstrateur. Le démonstrateur a été testé avec succès et a permis de prouver le concept. La nouvelle architecture de circuit de FPGA a permis de montrer que l'utilisation des mémoires MRAM comme mémoire de configuration de FPGA était avantageuse et en particulier pour les technologies futures.The aim of the thesis was to show that MRAM memory has many advantages for use as a configuration memory for reconfigurable architectures and especially Field Programmable Gate-Arrays (FPGAs). This type of component is programmable and allows designing a digital circuit simply by programming memory cells that define its functionality. An FPGA is thus mainly composed of memory cells. That is why they largely determine its characteristics as its surface or power consumption and affect its performance as its speed. MRAM memories are composed of Magnetic Tunnel Junctions (JTMs) which store information in the form of a magnetization. A JTM is composed of three layers: two layers of ferromagnetic material separated by an insulating layer. One of the two ferromagnetic layers has a magnetization pinned in a fixed direction (reference layer) while the other one can have its magnetization switched between two directions (storage layer). Thus, the propagation of the electrons is changed depending on whether the two magnetizations are parallel or antiparallel that is to say that the electrical resistance of the junction changes according to the orientation of the magnetizations. It is low when the magnetizations are parallel and high when antiparallel. Writing a JTM consists in changing the orientation of the magnetization of the storage layer while reading consists in determining if the resistance is high or low. The advantages of the JTM make it a good candidate to be used as a universal memory although research efforts are still needed. However, it has many advantages such as non-volatility, fast and low power consumption compared to writing to Flash memory as well as resistance to radiation. With these advantages, we may already use it in some applications and in particular in the field of space. Indeed, its use in this area allows taking advantage of all of the benefits of JTM due to the fact that it is intrinsically immune to radiation and non-volatile. It therefore enables to make a radiation hardened and low power FPGA with new functionalities. The work of this thesis is held over three years. The first year was dedicated to the state of the art in order to learn the mechanisms of JTMs, the architecture of FPGAs, radiation hardening and low power consumption techniques as well as the operation of the tools used in microelectronics. After the first year, a new FPGA architecture concept was proposed. The second and third years were devoted to the realization of this innovation with the search for the best circuit structure and the realization of an elementary component of a FPGA and the design and manufacture of a demonstrator. The demonstrator has been successfully tested and proved the new concept. The new circuit architecture of FPGA has shown that the use of MRAM cells as configuration memories for FPGAs was particularly advantageous for future technologies.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

Exchange bias effects in Fe nanoparticles embedded in an antiferromagnetic Cr2O3 matrix

Powders consisting of ferromagnetic (FM) Fe nanoparticles, of about 7 nm in size, embedded in an antiferromagnetic (AFM) Cr2O3 matrix have been obtained by high-temperature reduction under a hydrogen atmosphere of a mixed Cr–Fe oxide. This FM–AFM system exhibits exchange bias effects, i.e. a loop shift (HE) and coercivity enhancement (ΔHC), when field-cooled through the N´eel temperature, TN, of Cr2O3. The exchange bias properties were measured as a function of temperature. HE and ΔHC are found to vanish at about TN(Cr2O3), indicating a good quality AFM matrix. Hence, high-temperature reduction of mixed oxides is demonstrated to be a suitable technique to develop new types of FM–AFM exchange-biased nanoparticles, from which novel applications of this phenomenon may be developed

Unveiling temperature dependence mechanisms of perpendicular magnetic anisotropy at Fe/MgO interfaces

The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive to thermal effects. Thus, understanding temperature dependence of magnetic anisotropy becomes crucial. In this work, we theoretically address the correlation between temperature dependence of PMA and magnetization in typical Fe/MgO-based structures. In particular, the possible mechanisms behind experimentally reported deviations from the Callen and Callen scaling power law are analyzed. First-principles calculations reveal small high-order anisotropy terms ruling out an intrinsic microscopic mechanism underlying those deviations. Neglecting higher-order anisotropy terms in the atomisitic spin Hamiltonian, two possible extrinsic macroscopic mechanisms are unveiled: influence of the dead layer, always present in storage layer of STT-MRAM cells, and spatial inhomogeneities of interfacial magnetic anisotropy. We show that presence of a dead layer simultaneously with scaling the anisotropy constant by the total magnetization of the sample rather than that of the interface itself lead to low scaling powers. In the second mechanism, increasing the percentage of inhomogeneity in the interfacial PMA is revealed to decrease the scaling power. Apart from those different mechanisms, the layer-resolved temperature-dependence of PMA is shown to ideally follow the Callen and Callen scaling power law for each individual Fe layer. These results allow coherently explaining the difference in scaling powers relating anisotropy and magnetization thermal variations reported in earlier experiments. This is crucial for the understanding of the thermal stability of the storage layer magnetization in STT-MRAM applications.Comment: 9 pages, 8 figure

The contribution of x-ray specular reflectometry to the oxygen-induced magnetic properties in Pt/Co/AlOx

3 pagesInternational audienceTwo key parameters were analyzed in Si/SiO/Pt/Co/AlOx: the oxidation time of the Al layer resulting in AlOx, and the ex situ annealing temperatures varied in the 15 and 55 s and 20, 300, and 450 °C ranges, respectively. For intermediate annealing temperatures (∼300 °C), the quantitative analysis of specular reflectometry data shows that the progressive oxidation of layers by increasing the oxidation time goes along with an improvement of the homogeneity of the alumina layer. This outcome casts new light on the temperature dependence of magnetic properties of the samples. The remarkable temperature variation of the coercive field, extracted from extraordinary Hall effects in the 5-300 K range, is associated with structural change due to Co-oxygen bondings, which leads to strong pinning of Co spins in the low temperature regime

Investigation of metallic/oxide interfaces in Pt/Co/AlOx trilayers by hard x-ray reflectivity

International audienceX-ray reflectivity (XRR) is used to determine the oxidation front at the nanometer scale in sputtered perpendicular semi tunnel junctions, as the form Pt/Co/AlOx, by varying the oxidation time tOx of the capping layer. From XRR simulations, we show that the nature of the stack is gradually defined according to the value of tOx. For low tOx values (<40 s), a simple Pt/Co/Al/AlOx multilayer is appearing whereas a Pt/Co/CoO/AlOx architecture takes place for higher tOx. The oxygen-induced magnetic properties obtained by extraordinary Hall effects measurements are explained by the structural results. The increase of Co-O bondings with tOx is at the origin of the appearing of the perpendicular magnetic anisotropy (PMA)

Spin transfer torques in magnetic tunnel junctions

This chapter presents a review on spin transfer torque in magnetic tunnel junctions. In the first part, we propose an overview of experimental and theoretical studies addressing current-induced magnetization excitations in magnetic tunnel junctions. The most significant results are presented and the main observable characteristics are discussed. A description of the mechanism of spin transfer in ferromagnets is finally proposed. In the second part, a quantum description of spin transport in magnetic tunnel junctions with amorphous barrier is developed. The role of spin-dependent reflections as well as electron incidence and spin-filtering by the barrier are described. We show that these mechanisms give rise to specific properties of spin transfer in tunnel junctions, very different from the case of metallic spin-valves. In the third part, the theoretical observable features of spin transfer in magnetic tunnel junctions are derived and the validity of these results is discussed and compared to recent experiments. To conclude this chapter, we study the mechanism of spin transfer in half-metallic tunnel junctions, expected to mimic MgO-based magnetic tunnel junctions